item symbol unit drain-source voltage v ds v 4.0 gate-source voltage v gs v -3.0 total power dissipation p t* mw 290 storage temperature t stg c -65 to +175 channel temperature t ch c 175 rating absolute maximum rating (ambient temperature ta=25 c) *note: mounted on al 2 o 3 board (30 x 30 x 0.65mm) eudyna recommends the following conditions for the reliable operation of gaas fets: 1. the drain-source operating voltage (v ds ) should not exceed 3 volts. 2. the forward and reverse gate currents should not exceed 0.2 and -0.075 ma respectively with gate resistance of 4000 ? . 3. the operating channel temperature (t ch ) should not exceed 80 c. item saturated drain current transconductance pinch-off voltage gate source breakdown voltage noise figure associated gain symbol i dss 15 40 85 40 60 - -0.2 - -1.0 -2.0 1.2 1.6 -3.0 -- 8.5 10.0 - v ds = 2v, i ds = 1ma v ds = 3v, i ds = 10ma f = 12ghz v ds = 2v, i ds = 10ma v ds = 2v, v gs = 0v i gs = -10 a ma ms v db db v g m v p v gso nf g as test conditions unit limit typ. max. min. electrical characteristics (ambient temperature ta=25 c) note: rf parameters are measured on a sample basis as follows: lot qty. sample qty. accept/reject 1200 or less 125 (0,1) 1201 to 3200 200 (0,1) 3201 to 10000 315 (1,2) 10001 or over 500 (1,2) available case styles: lg channel to case thermal resistance - 220 300 c/w r th features ?low noise figure: 1.2b (typ.)@f=12ghz ?high associated gain: 10.0db (typ.)@f=12ghz ?lg 0.25 m, wg = 280 m ?gold gate metallization for high reliability ?cost effective ceramic microstrip (smt) package ?tape and reel packaging available description the FHX35LG is a high electron mobility transistor(hemt) intended for general purpose, low noise and high gain amplifiers in the 2-18ghz frequency range. this device is packaged in cost effective, low parasitic, hermetically sealed(lg) or epoxy-sealed(lp) metal-ceramic packages for high volume telecommunication, dbs, tvro, vsat or other low noise applications. eudyna stringent quality assurance program assures the highest reliability and consistent performance. 1 edition 1.1 july 1999 FHX35LG super low noise hemt
2 FHX35LG super low noise hemt power derating curve drain current vs. drain-source voltage 100 50 150 200 250 300 0 0 50 100 150 lg 200 1 0 23 ambient temperature ( c) drain-source voltage (v) total power dissipation (mw) 30 40 50 20 10 drain current (ma) v gs =0v -0.2v -0.6v -0.8v -1.0v -0.4v
3 FHX35LG super low noise hemt gas output power vs. input power f=12ghz v ds =3v i ds =15ma -5 0 5 10 input power (dbm) 15 25 10 5 output power (dbm) associated gain (db) nf & gas vs. temperature f=12ghz v ds =3v i ds =10ma 100 200 0 300 400 ambient temperature ( k) 2.0 1.5 1.0 15 10 5 noise figure (db) nf & gas vs. i ds f=12ghz v ds =3v v ds =3v i ds =10ma 12 10 8 7 9 11 10 20 30 drain current (ma) noise figure (db) associated gain (db) nf & gas vs. frequency 2 1 3 2 1 3 0 10 5 15 20 0 4681012 20 18 frequency (ghz) noise figure (db) associated gain (db) nf gas gas nf nf
4 f = 12 ghz v ds = 3v i ds = 10ma opt = 0.56 175 rn/50 = 0.08 nfmin = 1.2db typical noise figure circle +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j100 -j250 opt 2.0 2.5 3.0 1.5 20 15 10 5 0 20 15 10 5 0 4681012 20 v ds = 3v i ds = 15ma ga(max) frequency (ghz) ga(max) and |s 21 | 2 vs. frequency gain (db) |s 21 | 2 noise parameters v ds = 3v, i ds = 10ma freq. (ghz) opt (mag) (ang) nfmin (db) rn/50 2 4 6 8 10 12 14 16 18 0.81 0.74 0.69 0.64 0.60 0.56 0.53 0.50 0.48 32 63 93 127 148 175 -162 -139 -117 0.40 0.50 0.68 0.86 1.03 1.20 1.38 1.54 1.70 0.58 0.42 0.30 0.20 0.12 0.08 0.08 0.10 0.14 FHX35LG super low noise hemt
5 +j250 +j100 +j50 +j25 +j10 0 -j10 -j25 -j50 -j100 -j250 s 11 s 22 180 +90 0 -90 s 21 s 12 scale for |s 21 | scale for |s 12 | .04 .08 .12 .16 21 3 4 4 8 4 12 8 12 0.1 ghz 0.1 ghz 20 ghz 20 ghz 20 ghz 20 ghz 12 12 8 8 4 4 100 25 50 0.1ghz 0.1 ghz s-parameters v ds = 3v, i ds = 10ma frequency s11 s21 s12 s22 (mhz) mag ang mag ang mag ang mag ang 100 .996 -3.5 4.576 177.2 .002 81.2 .516 -2.5 500 .994 -12.1 4.548 169.0 .012 79.3 .517 -10.2 1000 .982 -23.5 4.471 158.5 .023 73.1 .513 -19.9 2000 .950 -44.7 4.304 139.3 .043 57.9 .498 -38.0 3000 .912 -64.6 4.026 121.0 .059 44.6 .483 -54.9 4000 .867 -84.0 3.742 103.1 .071 31.8 .462 -71.9 5000 .821 -101.6 3.436 86.6 .079 20.0 .446 -87.6 6000 .783 -117.5 3.132 71.6 .085 9.8 .439 -102.2 7000 .757 -130.9 2.881 57.9 .087 0.9 .441 -115.3 8000 .738 -142.8 2.659 45.0 .088 -7.1 .452 -126.7 9000 .726 -153.8 2.497 32.4 .090 -15.3 .468 -136.9 10000 .707 -164.5 2.347 20.2 .092 -21.7 .480 -146.1 11000 .680 -174.1 2.206 8.4 .090 -27.8 .494 -156.0 12000 .654 176.1 2.101 -3.4 .090 -35.5 .503 -164.8 13000 .638 166.0 2.035 -15.1 .091 -42.6 .514 -173.8 14000 .626 157.1 2.003 -26.2 .093 -49.6 .537 178.4 15000 .607 147.8 1.975 -37.6 .094 -55.8 .559 171.0 16000 .565 138.4 1.917 -50.1 .097 -64.7 .564 162.7 17000 .528 127.2 1.924 -62.9 .102 -73.3 .567 154.4 18000 .484 112.8 1.966 -77.1 .109 -86.2 .572 142.7 19000 .421 93.5 1.932 -91.7 .116 -96.2 .581 133.1 20000 .380 74.2 1.991 -107.4 .127 -110.9 .547 124.3 FHX35LG super low noise hemt
6 0.5 (0.02) 1.0 (0.039) 1.3 max (0.051) 0.1 (0.004) 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 case style "lg" metal-ceramic hermetic package unit: mm(inches) 1. gate 2. source 3. drain 4. source 1.5 0.3 (0.059) 1.78 0.15 (0.07) 1.5 0.3 (0.059) 4.78 0.5 1 2 3 4 FHX35LG super low noise hemt
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